Description
This compact N-Channel Unipolar MOSFET from TME delivers efficient switching and amplification for low-voltage, high-current applications. With a continuous drain current of 6A and a pulsed peak of up to 30A (Idm), it is ideal for compact, power-sensitive designs such as DC-DC converters, load switching, motor control, and battery-powered circuits.
Housed in a space-saving SOT-23 surface-mount package, it offers excellent thermal performance and a low gate threshold voltage for efficient logic-level control.
Specifications:
- Type: N-Channel MOSFET (Unipolar)
- Drain-Source Voltage (Vds): 8V
- Continuous Drain Current (Id): 6A
- Pulsed Drain Current (Idm): 30A
- Power Dissipation: 1.6W
- Gate-source voltage: ±5V
- On-state resistance:17mΩ
- Package: SOT-23 (SMD)
- Gate charge: 15.8nC
- Gate Threshold Voltage: Logic-level compatible
- Low RDS (on) for efficient switching
Ideal For:
- Power switching and load drivers
- DC motor control and LED dimming
- Battery-powered and portable electronics
- Compact embedded and IoT devices